bulk silicon中文是什么意思

• 矽制程

• "bulk"中文翻译    n. 1.体积，容积，大小。 2.巨大；庞然大物；大块； ...
• "silicon"中文翻译    n. ＝ silicium
• "silicon" 中文翻译 :    n. ＝ silicium
• "bulk" 中文翻译 :    n. 1.体积，容积，大小。 2.巨大；庞然大物；大块；大批，大量。 3.货舱；船货；散装货物。 4.〔the bulk〕，大半，大部分，大多数；主体。 5.【物理学】胀量；松密度。 6.〔书面语〕身体；胖人，大块头；〔诗〕巨人，巨兽。 a ship of great bulk 体积庞大的船。 The bulk of it! 这东西真大!The bulk of the debt was paid. 大部分的债都还清了。 He lifted his huge bulk from the chair. 他那庞大的身躯从椅子上站起来。 bulk analysis 【化学】总分析。 bulk cargo 散装货。 break bulk 下货，卸货。 by bulk 估堆，按堆(计算等)。 in bulk 1. 不加包装，散装。 2. 大批，大量 (load in bulk 散装入船，散运。 sell in bulk 原舱出售所装运的货，整批出售)。 vi. 1.显得庞大；看上去重要。 2.增大，膨胀，胀大；堆积起来；形成大块；扩展；(重要性等)增加。 3.(身体)发福。 The problem bulks large in his mind. 这个问题在他心目中显得很重要。 vt. 1.使膨胀；使增大。 2.堆积(鱼等)。 3.用眼力估计，毛估(重量、容量等)。 bulk large [small] in one's eyes [minds] 在某人眼[心目]中显得巨大。 bulk up 1. 胀大。 2. 形成大数目。
• "bulk for" 中文翻译 :    bulk体积比; bulk体积对体积比,体积对比
• "by bulk" 中文翻译 :    估堆
• "in bulk" 中文翻译 :    成块; 成批地,不散装的; 大批，大量；散装; 散装,大批,大量来源; 散装大宗货; 散装的
• "aluminium silicon" 中文翻译 :    硅铝合金
• "aluminum silicon" 中文翻译 :    铝硅合金
• "amorphous silicon" 中文翻译 :    非晶硅; 无定形硅
• "calcium silicon" 中文翻译 :    硅钙合金; 硅化钙; 矽化钙
• "carbon silicon" 中文翻译 :    碳化硅
• "carbonized silicon" 中文翻译 :    碳货硅，金刚砂
• "chrome-silicon" 中文翻译 :    铬硅
• "controllable silicon" 中文翻译 :    可控硅
• "crystal silicon" 中文翻译 :    结晶硅
• "crystalline silicon" 中文翻译 :    晶体硅
• "cupro silicon" 中文翻译 :    铜硅合金
• "cvd silicon" 中文翻译 :    化学汽相淀积硅
• "czochralski silicon" 中文翻译 :    切克劳斯基法生长硅
• "defective silicon" 中文翻译 :    有缺陷硅
• "dendritic silicon" 中文翻译 :    树枝状硅; 枝状硅
• "doped silicon" 中文翻译 :    掺杂硅
• "earth silicon" 中文翻译 :    二氧化硅; 硅石
• "effect of silicon" 中文翻译 :    硅的作用

• The corrosion rate of porous silicon in hf / h2o2 solution is several orders higher than that of bulk silicon
  多孔硅在hf / h _ 2o _ 2溶液中的腐蚀速率比体硅的高几个数量级。
• Bulk silicon , with indirect band gap of 1 . 12 ev , does n ' t emit visible light at room temperature
  本体硅为间接禁带半导体，且禁带宽度比较窄( 1 . 12ev ) ，在室温下很难发可见光。
• The mechanism of the luminescence has been discussed . bulk silicon , with indirect band gap of 1 . 12ev does n ' t emit light at room temperature
  本体硅为间接禁带半导体，且禁带宽度较窄，室温下很难发光。
• With a broaden and likely direct band gap , porous silicon has a different band structure to that of the bulk silicon . thus the porous silicon can emit at room temperature
  多孔硅改变了体硅的能带结构，使禁带展宽，并由间接带隙向直接带隙转变，实现了室温发光。
• With a broad and likely direct band gap , porous silicon has a different band structure from that of the bulk silicon . thus the porous silicon can emit visible light at room temperature
  多孔硅改变了本体硅的能带结构，使禁带宽度展宽，并由间接禁带向直接禁带转变，实现了室温发光。
• A method to make blazed silicon gratings is designed . the fabrication of ( 100 ) and ( 111 ) silicon wafer grating is performed by bulk silicon techniques . the surfaces of silicon gratings have been tested by afm
  设计了一种制作闪耀硅光栅的方法，利用体硅加工技术分别进行了( 100 )面硅片和( 111 )面硅片光栅的制作，对光栅的表面进行了测试。
• The micromechanical comb - capacitive accelerometers fabricated by bulk silicon micromachining process are widely used for having simple process , small temperature coefficient , good stability and easily controllable damping coefficient
  用体硅微机械工艺制作的梳齿电容式传感器有制作工艺简单、温度系数小、稳定性好、阻尼系数容易控制等优点，因而应用广泛。
• In the dissertation , a micromechanical comb capacitive accelerometer having u - shaped supporting beams is designed , simulated and fabricated on the base of the anodic bonding between the silicon and glass , and bulk silicon micromachining process
  而改用体硅微机械制作可以改善这些问题。本文设计、模拟并制作了一种基于硅一玻璃键合工艺的u型梁支撑的微机械电容式加速度计。
• The different kinds of pyroelectric sensors were prepared on the porous silicon dioxide , plastic film and bulk silicon substrates respectively . the nanocomposite pclttp ( vdf - trfe ) film was deposited by spin - coating used as the sensing film , and ni - cr film was chosen as upper electrode and absorb layer
  分别在多孔氧化硅、 pet塑料和硅衬底上，制备纳米陶瓷/ p ( vdf - trfe )复合敏感膜的热释电单元传感器。
• In the new structure , a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process . . the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
  新结构用三重扩散的方法在n ~ -单晶片上引入了n ~ +缓冲层，仍然保留了npt - igbt中薄而轻掺杂p层和高载流子寿命的本质优点，同时又具有pt - igbt中n ~ - ( n ~ + )双层复合的薄耐压层(即薄基区)的优点。

• bulk silicon перевод